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  tmmbat 29 small signal schottky diode description metal to silicon junction diode primarly intended for uhf mixers and ultrafast switching applications. november 1994 minimelf (glass) symbol parameter value unit v rrm repetitive peak reverse voltage 5 v i f forward continuous current t i = 25 c 30 ma i fsm surge non repetitive forward current t p 1s 60 ma t stg t j storage and junction temperature range - 65 to +150 - 65 to +125 c c t l maximum temperature for soldering during 15s 260 c absolute maximum ratings (limiting values) symbol test conditions value unit r th(j-l) junction-leads 400 c/w thermal resistance (1) pulse test: t p 300 m s d < 2% . (2) measured on b-line electronics qs-3 st ored charge meter. (3) noise figure test : - diode is inserted in a tuned stripline circuit - local oscillator frequency 1ghz - local oscillator power 1mw symbol test conditions min. typ. max. unit v br t amb = 25 ci r = 100 m a 5v v f (1) t amb = 25 ci f = 10ma 0.55 v i r (1) t amb = 25 cv r = 1v 0.05 m a static characteristics electrical characteristics symbol test conditions min. typ. max. unit c t amb = 25 cv r = 0v f = 1ghz 1pf qs (2) t amb = 25 ci f = 10ma 3pc f (3) t amb = 25 c f = 1ghz 67db dynamic characteristics 1/3
2/3 figure 1. forward current versus forward voltage (typical values). figure 2. capacitance c versus reverse applied voltage v r (typical values). figure 3. reverse current versus ambient temperature. figure 4. reverse current versus continuous reverse voltage (typical values). tmmbat 29
marking: ring at cat hode end. weight: 0.05g package mechanical data foot print dimensions (millimeter) minimelf glass b a c c o / 2.5 5 ref. dimensions millimeters inches min. max. min. max. a 3.3 3.6 0.130 0.142 b 1.59 1.62 0.063 0.064 c 0.4 0.5 0.016 0.020 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical c omponents in life support devi ces or systems wit hout express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - united kingdom - u.s.a. 3/3 tmmbat 29


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